PART |
Description |
Maker |
EL2125 EL2125CS-T13 EL2125CS-T7 EL2125CW-T7 EL2125 |
Ultra-Low Noise, Low Power, Wideband Amplifier Op Amp, 175MHz Wideband, Ultra Low Noise 0.83nV/√Hz, Low Power, 2.5-15VDC Ultra-Low Noise/ Low Power/ Wideband Amplifier
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Intersil Corporation
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OP-37AJ OP-37AZ OP-37BJ OP-37BZ OP-37CJ OP-37CZ OP |
LOW NOISE, PRECISION, HIGH SPEED OPERATIONAL AMPLIFIER(AVCL>=5) 703.02 Kbytes LOW NOISE, PRECISION, HIGH SPEED OPERATIONAL AMPLIFIER(AVCL>=5) LOW NOISE, PRECISION, HIGH SPEED OPERATIONAL AMPLIFIER(AVCL>=5) OP-AMP, 200 uV OFFSET-MAX, 63 MHz BAND WIDTH, CQCC20
|
AD[Analog Devices] Analog Devices, Inc.
|
AD883B2 AD883B3 AD600AQ AD602 AD602A AD602AQ AD602 |
Dual/ Low Noise/ Wideband Variable Gain Amplifiers connectors 双通道,低噪声,宽带可变增益放大器 Dual, Low Noise, Wideband Variable Gain Amplifiers
|
Analog Devices, Inc. ANALOG DEVICES INC
|
ISL6566CR ISL6566IR ISL6566CRZ |
Single Output LDO, 500mA, Adj. (1.3 to 6.5V), Low Noise 8-SOIC -40 to 125 Dual Low-Noise Wide-Bandwidth Precision Amplifier 8-TSSOP -40 to 85
|
Intersil Corporation
|
K4S64323LF-DN15 K4S64323LF-DN15-PB K4S64323LF-DN1H |
2M X 32 SYNCHRONOUS DRAM, 9 ns, PBGA90 Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 14-SOIC 0 to 70 2Mx32移动SDRAM 90FBGA Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 14-SOIC 2Mx32移动SDRAM 90FBGA Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 8-PDIP 0 to 70 2Mx32移动SDRAM 90FBGA Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 8-CDIP -55 to 125 2Mx32移动SDRAM 90FBGA Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 20-LCCC -55 to 125 2Mx32移动SDRAM 90FBGA 2Mx32 Mobile SDRAM 90FBGA 2Mx32移动SDRAM 90FBGA Dual Rail-To-Rail Micropower Operational Amplifier 8-SOIC 0 to 70
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
|
K4S643232C-TC/L80 K4S643232C-TC/L10 K4S643232C-TC/ |
ECONOLINE: RY & RX - Controllable Output- 1kVDC Isolation- No Heatsink Required- UL94V-0 Package Material- Toroidal Magnetics- No External Components- Fully Encapsulated- Efficiency to 70% Dual Low-Noise Precision Rail-To-Rail Operational Amplifier 14-SOIC 200万32内存12k × 32 × 4银行同步DRAM LVTTL Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 8-CDIP -55 to 125 200万32内存12k × 32 × 4银行同步DRAM LVTTL ECONOLINE: RY & RX - Controllable Output- 1kVDC Isolation- No Heatsink Required- UL94V-0 Package Material- Toroidal Magnetics- No External Components- Fully Encapsulated- Efficiency to 70% Replaced by TLC2201A : Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-PDIP -40 to 85 Replaced by TLC2201A : Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-SOIC -40 to 85 Dual Low-Noise Precision Rail-To-Rail Operational Amplifier 14-SOIC Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 20-LCCC -55 to 125 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
ADL7003CHIPS-SX |
Wideband Low Noise Amplifier
|
Analog Devices
|
TGA4830-15 |
Wideband Low Noise Amplifier
|
TriQuint Semiconductor
|
LT1806 LT1806CS8 LT1806IS8 1806I |
325MHz,140V/ms Rail-to-Rail Input and Output Low Distortion, Low Noise Precision Op Amp OP-AMP, 900 uV OFFSET-MAX, 290 MHz BAND WIDTH, PDSO8 325MHz,140V/ms Rail-to-Rail Input and Output Low Distortion Low Noise Precision Op Amp From old datasheet system
|
Linear Technology, Corp. Linear Technology Corporation LINER[Linear Technology]
|
BGU7044 |
1 GHz wideband low-noise amplifier
|
NXP Semiconductors
|